Alexander Mikhailovich Gaskov
(b. 1944)
INORGANIC CHEMISTRY DIVISION
LABORATORY OF PHYSICS AND CHEMISTRY OF
SEMICONDUCTORS
SPECIAL COURSE: GROWTH OF SINGLE
CRYSTALS AND THIN FILMS OF INORGANIC COMPOUNDS
SPECIAL COURSE: SURFACE ANALYSIS
METHODS
OCCUPATION: Professor. Graduated from the Chemistry Department of
Moscow State University (1966); Ph.D. (1969); Dr.Sci.; Professor (1986).
RESEARCH ACTIVITIES AND INTERESTS:
inorganic chemistry, phase diagrams, crystal and film growth, surface
analysis.
PHONE: (095) 939-5471
SELECTED PUBLICATIONS:
- V.P. Zlomanov, V.N. Demin and A.M. Gaskov.
- Predominant defects in semiconductor isovalent solid solutions A4B6.
J. of Materials Chemistry 1, 31 (1992).
- M.P. Belyansky and A.M. Gaskov.
- Interdiffusion in PbSe/PbTe heterostructure.
Le vide. Les coucher minces, Suppl. N 259, p. 92 (1991).
- B.A. Akimov, A.M. Gaskov, V.N. Glonty, I.I. Ivanchik, F.N. Putilin and
L.I. Ryabova.
- The laser deposited PbTe(Ga) films. Phys.Stat.Sol.(a) 142,
85 (1994).
- V.B. Bobruiko, G.G. Glavin, A.M. Gaskov and G.N. Maso.
- Layer-by-layer analysis of A4B6 thin-film heterostructures using
inductively coupled plasma atomic fluorescence spectrometry (ICP-AFS).
Fresenius J.Anal.Chem. 349, 424 (1994).
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